Programmable III-nitride transistor with aluminum-doped gate

摘要

Disclosed is a III-nitride heterojunction device that includes a conduction channel having a two dimensional electron gas formed at an interface between a first III-nitride material and a second III-nitride material. A modification including a contact insulator, for example, a gate insulator formed under a gate contact, is disposed over the conduction channel, wherein the contact insulator includes aluminum to alter formation of the two dimensional electron gas at the interface. The contact insulator can include AlSiN, or can be SiN doped with aluminum. The modification results in programming the threshold voltage of the III-nitride heterojunction device to, for example, make the device an enhancement mode device. The modification can further include a recess, an ion implanted region, a diffused region, an oxidation region, and/or a nitridation region. In one embodiment, the first III-nitride material comprises GaN and the second III-nitride material comprises AlGaN.

主权项

1. A III-nitride heterojunction device comprising:
a conduction channel including a two dimensional electron gas formed in a first III-nitride material at an interface between said first III-nitride material and a second III-nitride material; first and second ohmic contacts configured to conduct current through said conduction channel without directly contacting said first III-nitride material; a modification including a contact insulator disposed over said conduction channel, said contact insulator diffused or implanted with aluminum to charge said contact insulator to form a negatively charged contact insulator, said charge altering formation of said two dimensional electron gas at said interface.