发明名称 |
Photonic crystal scintillators and methods of manufacture |
摘要 |
Photonic crystal scintillators and their methods of manufacture are provided. Exemplary methods of manufacture include using a highly-ordered porous anodic alumina membrane as a pattern transfer mask for either the etching of underlying material or for the deposition of additional material onto the surface of a scintillator. Exemplary detectors utilizing such photonic crystal scintillators are also provided. |
申请公布号 |
US9103921(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201314035150 |
申请日期 |
2013.09.24 |
申请人 |
Savannah River Nuclear Solutions, LLC |
发明人 |
Torres Ricardo D.;Sexton Lindsay T.;Fuentes Roderick E.;Cortes-Concepción José |
分类号 |
G01T1/20;G01T1/202 |
主分类号 |
G01T1/20 |
代理机构 |
Dority & Manning, P.A. |
代理人 |
Dority & Manning, P.A. |
主权项 |
1. A method for manufacturing a photonic crystal scintillator, the method comprising:
generating an alumina membrane by anodizing aluminum foil, wherein the alumina membrane comprises a plurality of pores arranged in a generally hexagonal lattice structure; affixing the alumina membrane adjacent to a surface of a scintillator; performing an etching technique to generate a plurality of holes in the scintillator, wherein the plurality of holes are respectively located beneath the plurality of pores; and removing the alumina membrane from the surface of the scintillator; coating the surface of the scintillator with a coating material prior to affixing the alumina membrane; wherein affixing the alumina membrane adjacent to the surface of the scintillator comprises affixing the alumina membrane adjacent to the coating material; wherein performing the etching technique to generate the plurality of holes in the scintillator comprises performing the etching technique to generate the plurality of holes in the coating material; and wherein removing the alumina membrane from the surface of the scintillator comprises removing the alumina membrane from the coating material; wherein the coating material forms a layer having a thickness substantially equal to one-half of an emission wavelength associated with the scintillator. |
地址 |
Aiken SC US |