| 摘要 |
A metal substrate with insulated vias (MSIV) has a metallic layer with through- holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through- hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm-1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices. |
