| 摘要 |
<p>A film deposition apparatus comprises a vacuum chamber, a rotation table which is arranged in the vacuum chamber and mount and rotates a substrate on a mounting region, a process gas supply part which supplies a process gas of a thermal decomposition temperature of 520°C or more under 1 atmosphere, and a heating part which heats the rotation table to perform a film deposition process by heating the substrate at 600°C. The process gas supply part comprises a gas shower head which has the injection hole of process gases facing the passing region of the substrate, and a cooling unit which cools a facing part opposite to the passing region in the gas shower head in a film deposition process at a at a temperature which is lower than the thermal deposition temperature of the process gas.</p> |
