发明名称 CURRENT SENSOR
摘要 A current sensor includes a die and a shunt resistor having a first temperature coefficient and having a first node and a second node fabricated onto the die, wherein the shunt resistor is for passing the current that is to be sensed. A first compensation resistor is fabricated onto the die and is coupled to the first node of the shunt resistor, wherein the first compensation resistor is proximate the shunt resistor and has a temperature coefficient that is similar to the temperature coefficient of the shunt resistor. A second compensation resistor is fabricated onto the die and is coupled to the second node of the shunt resistor, wherein the second compensation resistor is proximate the shunt resistor and has a temperature coefficient that is the close to the temperature coefficient of the shunt resistor.
申请公布号 US2015219690(A1) 申请公布日期 2015.08.06
申请号 US201514611427 申请日期 2015.02.02
申请人 Texas Instruments Incorporated 发明人 Kaya Cetin
分类号 G01R1/20;G01R19/00 主分类号 G01R1/20
代理机构 代理人
主权项 1. A current sensing device comprising: a die; a shunt resistor fabricated onto the die, the shunt resistor for passing the current that is to be sensed, the shunt resistor being fabricated from a first material having a first temperature coefficient, and the shunt resistor having a first node and a second node; a first compensation resistor fabricated onto the die, the first compensation resistor coupled to the first node of the shunt resistor, wherein the first compensation resistor is proximate the shunt resistor and is maintained at approximately the same temperature as the shunt resistor by way of its proximity, and wherein the first compensation resistor has a temperature coefficient that is close to the temperature coefficient of the shunt resistor; and a second compensation resistor fabricated onto the die, the second compensation resistor coupled to the second node of the shunt resistor, wherein the second compensation resistor is proximate the shunt resistor and is maintained at approximately the same temperature as the shunt resistor by way of its proximity, and wherein the second compensation resistor has a temperature coefficient that is close to the temperature coefficient of the shunt resistor.
地址 Dallas TX US