DUAL WORK FUNCTION BRUIED GATE TYPE TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME

摘要

The present technology relates to a buried gate type transistor for improving a gate-induced drain leakage current and a current driving capability and a method for manufacturing the same. The transistor according to the present technology includes: a source region and a drain region formed to be apart from each other within a substrate; a trench formed between the source region and the drain region within the substrate; and a buried gate electrode within the trench. The buried gate electrode includes: a high work function liner layer having a bottom part on the bottom of the trench and a sidewall part extended from the bottom part to be located on the sidewall; a low work function liner layer extended from the side wall part of the high work function liner layer and overlapped with the source region and the drain region; a low resistance layer in contact with the high work function liner layer and the low work function liner layer, partially filling the trench; and a barrier layer between the low resistance layer and the high work function liner layer and between the low resistance layer and the low work function liner layer.