| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a dry etching method capable of suppressing side etching to an inorganic film for forming a hard mask and scalloping shape, the dry etching method being used to perform plasma etching on the inorganic film and a plurality of pair layers.SOLUTION: A dry etching method includes plasma etching on: a second laminated film formed by laminating a plurality of first laminated films, the first laminated film being formed by laminating a silicon containing film and a silicon oxide film; and an inorganic film arranged at the upper side of the second laminated film. Etching is performed on the inorganic film and the second laminated film while using a mixture gas of an NFgas and a CHF gas.</p> |
