| 摘要 |
The present invention provides: a method for manufacturing an organic thin film transistor, which is a method for manufacturing a bottom-gate, bottom-contact or top-gate, top-contact organic thin film transistor that has a structure which comprises a gate electrode, a gate insulating film layer containing an organic insulating material, a source electrode, a drain electrode and an organic semiconductor layer such that the gate insulating film layer and the source electrode as well as the gate insulating film layer and the drain electrode are respectively in contact with each other, said method comprising a step wherein the source electrode and/or the drain electrode is formed by subjecting a coating film, which is formed using a conductive film-forming composition that contains copper oxide particles having an average primary particle diameter of 100 nm or less, metal particles or salt containing at least one metal element selected from the group consisting of group 8-11 elements of the periodic table and an alcohol compound, to heat firing or optical firing; and an organic thin film transistor which is manufactured by this manufacturing method. |
