| 发明名称 |
SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS |
| 摘要 |
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material. |
| 申请公布号 |
US2015217330(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201514612784 |
申请日期 |
2015.02.03 |
| 申请人 |
ASM IP Holding B.V. |
发明人 |
Haukka Suvi P.;Matero Raija H.;Tois Eva;Niskanen Antti;Tuominen Marko;Huotari Hannu;Pore Viljami J.;Raaijmakers Ivo |
| 分类号 |
B05D3/10;C23C26/00 |
主分类号 |
B05D3/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for selectively depositing a dielectric material on a first dielectric surface of a substrate relative to a second metal surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ge, Si or Mg and a second reactant, and wherein the dielectric material is selected from GeO2, SiO2 and MgO. |
| 地址 |
Almere NL |
