| 摘要 |
The present invention relates to a method for doping a solar cell, a method for forming a metal electrode in a solar cell, and a solar cell manufactured by the methods, more specifically characterized in terms of simultaneously forming, in a single step, a high-doping area around an electrode to reduce contact resistance with the electrode, and a silicide layer used in the metal electrode. The present invention comprises: carrying out a doping step for forming a p-n junction on a silicon wafer and a passivation step; and then a step of removing a portion of a passivation layer to form a contact area; a step of adding a dopant source and an ink to the contact area, wherein the ink comprises a mixture of raw metals of silicon and silicide; forming the high-doping area by diffusing, on a silicon wafer, a dopant included in the silicide while forming a silicide layer by treating the contact area in an inert atmosphere or a reducing atmosphere; and a step of forming the metal electrode on top of the high-doping area. |
