| 发明名称 |
ETCHING OF UNDER BUMP METTALLIZATION LAYER AND RESULTING DEVICE |
| 摘要 |
Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns. |
| 申请公布号 |
US2015221605(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201414172323 |
申请日期 |
2014.02.04 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
ATANASOVA Tanya Andreeva;WILLEKE Reiner;DUONG Anh Ngoc |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion of a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns. |
| 地址 |
Grand Cayman KY |
