发明名称 HIGH PURITY GERMANIUM DETECTOR
摘要 The present disclosure provides a High-Purity Germanium (HPGe) detector, comprising: a HPGe single crystal having an intrinsic region exposed surface; a first electrode and a second electrode connected to a first contact electrode and a second contact electrode of the HPGe single crystal respectively; and a conductive guard ring arranged in the intrinsic region exposed surface around the first electrode to separate the intrinsic region exposed surface into an inner region and an outer region. A leakage current derived from the intrinsic region exposed surface of the HPGe detector can be separated from the current of the HPGe detector by the conductive guard ring provided in the surface, thereby suppressing the interference of the surface leakage current.
申请公布号 US2015219773(A1) 申请公布日期 2015.08.06
申请号 US201414574848 申请日期 2014.12.18
申请人 Nuctech Company Limited 发明人 Zhang Qingjun;Li Yuanjing;Chen Zhiqiang;Li Yulan;Ma Qiufeng;Zhao Ziran;Liu Yinong;Chang Jianping
分类号 G01T1/24 主分类号 G01T1/24
代理机构 代理人
主权项 1. A HPGe detector, comprising: a HPGe single crystal having an intrinsic region exposed surface; a first electrode and a second electrode connected to a first contact electrode and a second contact electrode of the HPGe single crystal respectively; and a conductive guard ring arranged in the intrinsic region exposed surface around the first electrode to separate the intrinsic region exposed surface into an inner region and an outer region.
地址 Beijing CN