| 发明名称 |
POLISHING METHOD AND POLISHING APPARATUS |
| 摘要 |
A polishing method and a polishing apparatus for performing a measurement of a film thickness of a substrate, such as a wafer, if an error has occurred during polishing of the substrate. The polishing method includes polishing a plurality of substrates, measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished, and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate. |
| 申请公布号 |
US2015221562(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201514602254 |
申请日期 |
2015.01.21 |
| 申请人 |
Ebara Corporation |
发明人 |
TORIKOSHI Tsuneo;OTAKI Hirofumi |
| 分类号 |
H01L21/66;H01L21/67;H01L21/02;B24B37/04;B24B49/00 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A polishing method comprising:
polishing a plurality of substrates; measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished; and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate. |
| 地址 |
Tokyo JP |
