| 摘要 |
A method for manufacturing a semiconductor light emitting device that comprises, as constituent members, a substrate, an element and a sealing material. This method for manufacturing a semiconductor light emitting device comprises: a first step for arranging an element on a substrate; a second step for disposing a sealing material before curing on the substrate so as to cover the element for the purpose of potting; and a third step for curing the sealing material disposed for the purpose of potting so that all the conditions (1), (2) and (3) described below are satisfied if AbsA(t), AbsB(t) and AbsC(t) are respective absorbances of a sealing material, which has a thickness (t) [mm] after curing, at wavelengths of 380 nm, 316 nm and 260 nm and T(t) is the light transmittance of the sealing material at a wavelength of 380 nm. (1) T(1.7) ≥ 90% (2) AbsB(t) - AbsA(t) < 0.011t (3) Absc(t) - AbsA(t) < 0.125t |
