| 摘要 |
<p>The present invention relates to a pre-charge circuit which can efficiently change the level of voltage by which data input/output lines are pre-charged depending on the operation of a semiconductor memory apparatus, and to a semiconductor memory apparatus using the same. The pre-charge circuit comprises a pre-charge control unit, a first pre-charge unit and a second pre-charge unit. The pre-charge control unit responds to a read signal, a write signal and a pre-charge signal to generate a read pre-charge signal and a write pre-charge signal. The first pre-charge unit responds to the read pre-charge signal to pre-charge a data input/output line at the level of a first voltage. The second pre-charge unit responds to the write pre-charge signal to pre-charge the data input/output line with either a second voltage or a third voltage.</p> |
