| 摘要 |
A thin-film solar cell which uses an InS-based buffer layer is produced by forming a metal back electrode layer on a substrate, forming a p-type light absorption layer on the metal back electrode layer, oxidizing the p-type light absorption layer surface, forming an InS-based buffer layer as an n-type high resistance buffer layer on the oxidized p-type light absorption layer, and forming an n-type transparent conductive film on the InS-based buffer layer. |
