发明名称 量子閉じ込め遷移金属ドープ半導体に基づく電気的にポンプ(励起)された広範に調整可能な中赤外レーザ
摘要 <p>Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.</p>
申请公布号 JP5758575(B2) 申请公布日期 2015.08.05
申请号 JP20090500415 申请日期 2007.03.12
申请人 发明人
分类号 H01S5/347 主分类号 H01S5/347
代理机构 代理人
主权项
地址