发明名称 Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same
摘要 A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.
申请公布号 US9096946(B2) 申请公布日期 2015.08.04
申请号 US201113304497 申请日期 2011.11.25
申请人 Korea Institute of Energy Research 发明人 Lee Jin Seok;Jang Bo Yun;Ahn Young Soo
分类号 C30B35/00;C30B15/00;C30B15/10;C30B29/06 主分类号 C30B35/00
代理机构 Patent Office of Dr. Chung Park 代理人 Patent Office of Dr. Chung Park
主权项 1. A manufacturing apparatus of a silicon thin film comprising: a silicon base material introduction part to supply a silicon base material; a dual crucible for silicon melting mounted under the silicon base material introduction part; a crucible heating part to heat the dual crucible for the silicon melting, to form molten silicon by melting the silicon base material; a molten silicon storage part to tap the molten silicon stored therein as a preset amount of silicon melt after storing the molten silicon therein; a transfer substrate disposed under the molten silicon storage part, to transfer the tapped silicon melt; a gate bar to open and close an outlet part configured to the dual crucible; and a thin film forming part to form a silicon thin film by cooling the silicon melt transferred by the transfer substrate, wherein the dual crucible for the silicon melting comprises a graphite crucible formed in a container shape with an open top and a bottom having the outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part; and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.
地址 Daejeon KR