发明名称 |
Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same |
摘要 |
A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein. |
申请公布号 |
US9096946(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201113304497 |
申请日期 |
2011.11.25 |
申请人 |
Korea Institute of Energy Research |
发明人 |
Lee Jin Seok;Jang Bo Yun;Ahn Young Soo |
分类号 |
C30B35/00;C30B15/00;C30B15/10;C30B29/06 |
主分类号 |
C30B35/00 |
代理机构 |
Patent Office of Dr. Chung Park |
代理人 |
Patent Office of Dr. Chung Park |
主权项 |
1. A manufacturing apparatus of a silicon thin film comprising:
a silicon base material introduction part to supply a silicon base material; a dual crucible for silicon melting mounted under the silicon base material introduction part; a crucible heating part to heat the dual crucible for the silicon melting, to form molten silicon by melting the silicon base material; a molten silicon storage part to tap the molten silicon stored therein as a preset amount of silicon melt after storing the molten silicon therein; a transfer substrate disposed under the molten silicon storage part, to transfer the tapped silicon melt; a gate bar to open and close an outlet part configured to the dual crucible; and a thin film forming part to form a silicon thin film by cooling the silicon melt transferred by the transfer substrate, wherein the dual crucible for the silicon melting comprises a graphite crucible formed in a container shape with an open top and a bottom having the outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part; and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein. |
地址 |
Daejeon KR |