Method for manufacturing semiconductor device

摘要

In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer over a substrate; forming an oxide insulating layer so as to be in contact with the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer through the oxide insulating layer; after adding oxygen, performing heat treatment on the oxide insulating layer and the oxide semiconductor layer; forming a first insulating layer over the oxide insulating layer; and forming a gate electrode layer over the first insulating layer.