发明名称 Method of processing a device substrate
摘要 Methods of processing a device substrate are disclosed herein. In one embodiment, a method of processing a device substrate can include bonding a first surface of a device substrate to a carrier with a polymeric material. The device substrate may have a plurality of first openings extending from the first surface towards a second surface of the device substrate opposite from the first surface. Then, material can be removed at the second surface of the device substrate, wherein at least some of the first openings communicate with the second surface at least one of before or after performing the removal of the material. Then, at least a portion of the polymeric material disposed between the first surface and the carrier substrate can be exposed to a substance through at least some first openings to debond the device substrate from the carrier substrate.
申请公布号 US9099482(B2) 申请公布日期 2015.08.04
申请号 US201414323329 申请日期 2014.07.03
申请人 Invensas Corporation 发明人 Monadgemi Pezhman
分类号 H01L21/304;H01L23/00;H01L21/311;H01L21/768;H01L21/78 主分类号 H01L21/304
代理机构 Lerner, David, Littenberg, Krumholz & Mentlik, LLP 代理人 Lerner, David, Littenberg, Krumholz & Mentlik, LLP
主权项 1. A method of processing a device substrate, comprising: a) bonding a first surface of a device substrate to a carrier with a polymeric material or a dielectric material, wherein the device substrate has a plurality of integral portions which are bounded at edges of each integral portion at dicing lanes of the device substrate, wherein the integral portions are configured to be separated from one another by severing the device substrate along the dicing lanes, wherein the device substrate has a plurality of first openings and a plurality of second openings, the first and second openings extending from the first surface towards a second surface of the device substrate opposite from the first surface, wherein the device substrate includes a plurality of electrically conductive columns extending within the plurality of second openings extending in a direction of a thickness of the device substrate; b) then removing material exposed at the second surface of the device substrate to cause at least some of the first openings and at least some of the second openings to communicate with the second surface and at least some of the electrically conductive columns to protrude from the second surface; c) then exposing at least a portion of the polymeric material or the dielectric material disposed between the first surface and the carrier substrate to a substance through at least some first openings to debond the device substrate from the carrier substrate; and (d) then separating the integral portions from one another by severing the debonded device substrate along the dicing lanes.
地址 San Jose CA US