| 发明名称 | Light emitting device | ||
| 摘要 | Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum. | ||
| 申请公布号 | US9099611(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201313735607 | 申请日期 | 2013.01.07 |
| 申请人 | LG INNOTEK CO., LTD.;TAMURA CORPORATION;KOHA CO., LTD. | 发明人 | Moon Yong Tae |
| 分类号 | H01L31/00;H01L31/0256;H01L21/36;H01L21/20;H01L33/32;H01L21/02;H01L33/00;H01L33/12;H01L33/44 | 主分类号 | H01L31/00 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A light emitting device comprising: a gallium oxide layer over a gallium oxide substrate; a gallium nitride layer over the gallium oxide layer; and a light emitting structure over the gallium nitride layer, wherein the light emitting structure is directly disposed on the gallium nitride layer, and wherein the light emitting structure comprises: a second conductive semiconductor layer over the gallium nitride layer;an active layer over the second conductive semiconductor layer; anda first conductive semiconductor layer over the active layer,wherein the second conductive semiconductor layer is disposed on the gallium nitride layer. | ||
| 地址 | Seoul KR | ||