Zener diode devices and related fabrication methods

摘要

Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configured to influence a first reverse breakdown voltage of a junction between the first region and the second region. The second Zener diode structure includes a fourth region, a fifth region that is adjacent to the fourth region, and a sixth region adjacent to the fourth region and the fifth region to provide a junction configured to influence a second reverse breakdown voltage of a junction between the fourth region and the fifth region, wherein the second reverse breakdown voltage and the first reverse breakdown voltage are different.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first Zener diode structure on the semiconductor substrate, the first Zener diode structure including:
a first region having a first conductivity type and a first dopant concentration;a second region having a second conductivity type and a second dopant concentration, the second region being adjacent to the first region to provide a vertical junction between the first region and the second region, the first region overlying the second region; anda third region adjacent to the first region and the second region to provide a lateral junction between the third region and one of the first region or the second region, wherein the lateral junction is configured to influence a first reverse breakdown voltage of the vertical junction; and a second Zener diode structure on the semiconductor substrate, the second Zener diode structure including:
a fourth region having the first conductivity type and the first dopant concentration;a fifth region having the second conductivity type and the second dopant concentration, the fifth region being adjacent to the fourth region to provide a third junction between the fourth region and the fifth region; anda sixth region adjacent to the fourth region and the fifth region to provide a fourth junction between the sixth region and one of the fourth region or the fifth region, wherein the fourth junction is configured to influence a second reverse breakdown voltage of the third junction, wherein:
the second reverse breakdown voltage and the first reverse breakdown voltage are different; anda third reverse breakdown voltage of the lateral junction is greater than the first reverse breakdown voltage of the vertical junction.