Semiconductor substrate and semiconductor device, and manufacturing method of semiconductor substrate

摘要

A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 1010 cm−2. Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate.

主权项

1. A semiconductor substrate, comprising:
a silicon substrate; and a nitride semiconductor layer that is epitaxially grown on a Si (150) surface of the silicon substrate.