发明名称 Electrolysis transistor
摘要 An electrolysis transistor for providing high-density electrochemistry and products utilizing the same, and high-efficiency electrolysis and electrochemical processes is disclosed. The electrolysis transistor may comprise an electrolyte, one or more working electrodes for transferring charge to or from said electrolyte, and one or more gate structures for altering electrode over-voltage and modifying the barrier at the electrode-electrolyte interface, reducing the voltage necessary for electrolysis. An electrochemical or photo-electrochemical cell may incorporate one or more of these electrolysis transistors.
申请公布号 US9096939(B2) 申请公布日期 2015.08.04
申请号 US200812156178 申请日期 2008.05.29
申请人 Transphorm, Inc. 发明人 Mishra Umesh;Lai Rakesh;Shen Likun;McCarthy Lee;Parikh Primit
分类号 C25B9/00;C25B9/04;C02F1/461;C25B1/02;C25B11/00;C25B15/00;C25B11/04;C25B1/00;C25B1/04;C25B1/06 主分类号 C25B9/00
代理机构 Koppel, Patrick, Heybl & Philpott 代理人 Koppel, Patrick, Heybl & Philpott
主权项 1. A device, comprising: a first electrode and second electrode; a gate structure coupled to an insulating material layer, wherein said insulating material layer prevents current from flowing from said gate structure, said gate structure electrically coupled to one of said first and second electrodes, wherein said gate structure is overhanging either said first or second electrode; and a liquid electrolyte disposed between the electrodes and the gate structure, said liquid electrolyte configured to produce hydrogen or oxygen through electrolysis; wherein the electric coupling is such that an electrical bias applied to said gate structure causes an electrical field formed in the electrolyte to lower an electrical potential barrier to electrolysis of the electrolyte, and a proximity of the gate structure to an active electrode surface of the first or second electrode is less than 100 nm, such that the electrical potential barrier to electrolysis is directly lowered at the electrode surface.
地址 Goleta CA US