| 发明名称 | Atomic layer deposition with plasma source | ||
| 摘要 | The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus. | ||
| 申请公布号 | US9095869(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201114009647 | 申请日期 | 2011.04.07 |
| 申请人 | Picosun OY | 发明人 | Kilpi Vaino;Li Wei-Min;Malinen Timo;Kostamo Juhana;Lindfors Sven |
| 分类号 | H01L21/31;B05C5/00;C23C16/40;C23C16/455;H01L21/02;H01J37/32 | 主分类号 | H01L21/31 |
| 代理机构 | Harrington & Smith | 代理人 | Harrington & Smith |
| 主权项 | 1. A method comprising: operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions; allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle; and guiding inert gas towards the reaction chamber via thermal atomic layer deposition in-feed line(s) during the plasma atomic layer deposition period, the thermal atomic layer deposition in-feed line(s) being separate from plasma source line(s) via which radicals are guided into the reaction chamber during the plasma atomic layer deposition period. | ||
| 地址 | Espoo FI | ||