III-V group compound devices with improved efficiency and droop rate

摘要

The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

主权项

1. A photonic device, comprising:
an n-type III-V group layer disposed over a substrate; a p-type III-V group layer disposed over the n-type layer; a quantum well disposed between the n-type III-V group layer and the p-type III-V group layer; wherein: the quantum well includes a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layers; the active layers have substantially uniform thicknesses; a subset of the barrier layers are doped with a p-type dopant; the dopant concentration for the barrier layers in the subset are inversely correlated with distances between the barrier layer and the p-type III-V group layer; and a thickness of each barrier layer is a function of its location with respect to the p-type III-V group layer such that each barrier layer is thicker than an immediately adjacent barrier layer that is located closer to the p-type III-V group layer.