发明名称 Carrier structures for microelectronic elements
摘要 A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.
申请公布号 US9099479(B2) 申请公布日期 2015.08.04
申请号 US201213618514 申请日期 2012.09.14
申请人 Tessera, Inc. 发明人 Oganesian Vage;Haba Belgacem;Mitchell Craig;Mohammed Ilyas;Savalia Piyush
分类号 H05K1/18;H01L23/538;H01L23/00;H01L25/10;H01L25/00;H01L25/16;H01L23/13;H01L23/31;H01L23/498 主分类号 H05K1/18
代理机构 Lerner, David, Littenberg, Krumholz & Mentlik, LLP 代理人 Lerner, David, Littenberg, Krumholz & Mentlik, LLP
主权项 1. A microelectronic unit, comprising: a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure, the carrier structure including at least one of semiconductor material or glass; a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface; terminals electrically connected with the contacts of the microelectronic element, the terminals being electrically insulated from the carrier structure; a dielectric region contacting at least the bottom surface of the microelectronic element and extending between sidewalls of the recess and the microelectronic element, the dielectric region defining a planar surface located coplanar with or above the front surface of the carrier structure; and a plurality of conductive vias extending from a major surface of the dielectric region to the inner surface and extending through the carrier structure to the rear surface.
地址 San Jose CA US