| 摘要 |
PROBLEM TO BE SOLVED: To provide an art to reduce resistance generated when carriers pass a channel.SOLUTION: A semiconductor device 1 comprises: a gate electrode 22; a gate insulation film 23 which covers the gate electrode 22; a base layer 12 which contacts the gate insulation film 23 and in which a channel 30 where carriers pass is formed; a source layer 11 which contacts the gate insulation film 23 and is arranged adjacent to one side of the base layer 12; and a drift layer 13 which contacts the gate insulation film 23 and is arranged adjacent to the other side of the base layer 12. The base layer 12 includes in a part contacting the gate insulation film 23, a first source-side salient 10 which extends along the gate insulation film 23 to the source layer 11 side. In addition, the base layer 12 includes in a part contacting the gate insulation film 23, a first drift-side salient 20 which extends along the gate insulation film 23 to the drift layer 13 side. |
