| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a decrease in resistance to abnormal current flow of a semiconductor device.SOLUTION: A semiconductor device comprises: a first transistor TR1 sandwiched by two second transistors TR21 (a first second transistor TR2 and a second second transistor TR2) in a second direction. Each of a distance between a second source contact SCON2 and a second drain contact DCON21 which are connected to the one second transistor TR2, and a distance between the second source contact SCON2 and the second drain contact DCON21 which are connected to the other second transistor TR21 is larger than a distance between the second source contact SCON2 and the drain contact DCON2 which are connected to a third second transistor TR2 farthest from the first transistor in the second direction. |
