| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-type ZnO-based semiconductor crystal layer in which an Ag element is doped into a ZnO-based semiconductor.SOLUTION: A method of manufacturing a p-type ZnO-based semiconductor crystal layer includes: a first step of growing a base layer that can epitaxially grow a ZnO-based semiconductor layer; a second step of simultaneously supplying Zn, O, Ag of a p-type impurity, and a Group-3B element of an n-type impurity on the base layer to grow the ZnO-based semiconductor layer into which Ag and the Group-3B element are codoped; and a third step of annealing the ZnO-based semiconductor layer into which Ag and the Group-3B element are codoped to make it be p-type. |
