用于电浆切割半导体晶圆的方法与设备;METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER

摘要

本发明提供一种电浆切割基板的方法。该方法包含：提供一具有墙的制程腔体；提供一邻近该制程腔体之墙的电浆源；提供一在制程腔体中的工作件支座；将基板放在框架上的支座膜上以形成工作件；将该工作件载入至工作件支座；提供一盖环放置在工作件上；从电浆源产生电浆；以及透过产生的电浆蚀刻该工作件。; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.