SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of improving voltage-withstanding performance and switching characteristics.SOLUTION: In a semiconductor device 1, an IGBT region 2 and a diode region 3 are formed on an identical semiconductor substrate 4 located adjacent to each other. The semiconductor device 1 includes multiple first gate trenches 11 which are lined up and extend in one direction at the IGBT region 2; and multiple second gate trenches 12 extending in a direction that intersects with the first gate trenches 11. The first gate trenches 11 and the second gate trenches 12 do not contact with each other.