| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can simultaneously form a plurality of contacts having depths different from each other without causing penetration of stopper film.SOLUTION: A semiconductor device comprises a plurality of stacked conductive films and an insulation layer formed on the conductive films. The semiconductor device has: stair-shaped parts formed by the conductive films on ends of the plurality of conductive films; a plurality of contact electrodes which are connected to top faces of the conductive films from a top face of the insulation layer at the stair-shaped parts and have depths different from each other; and an adjustment film provided in the insulation layer. The semiconductor device has a first contact group and a second contact group each including a plurality of contact electrodes having opening depths different from each other. The plurality of contact electrodes belonging to the second contact group pierces te adjustment film. A depth of an opening of the shallowest contact electrode belonging to the first contact group is deeper than a depth of the deepest contact electrode belonging to the second contact group. |
