发明名称 |
METHODS TO INTEGRATE SONOS INTO CMOS FLOW |
摘要 |
Methods of forming memory cells including non-volatile memory (NVM) and MOS transistors are described. In one embodiment the method includes: depositing and patterning a gate layer over a dielectric stack on a substrate to form a gate of a NVM transistor, the dielectric stack including a tunneling layer overlying a surface of the substrate, a charge-trapping layer overlying the tunneling layer and a blocking layer overlying the charge-trapping layer; forming a mask exposing source and drain (S/D) regions of the NVM transistor; etching the dielectric stack through the mask to thin the dielectric stack by removing the blocking layer and at least a first portion of the charge-trapping layer in S/D regions of the NVM transistor; and implanting dopants into S/D regions of the NVM transistor through the thinned dielectric stack to form a lightly-doped drain adjacent to the gate of the NVM transistor. |
申请公布号 |
WO2015112245(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
WO2014US66397 |
申请日期 |
2014.11.19 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
RAMKUMAR, KRISHNASWAMY;PRABHAKAR, VENKATRAMAN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|