发明名称 ALUMINUM PLATING SOLUTION, ALUMINUM FILM, RESIN STRUCTURE, POROUS ALUMINUM OBJECT, AND POROUS ALUMINUM OBJECT MANUFACTURING METHOD
摘要 Provided is an aluminum plating solution with a large current density region in which aluminum plating is possible and small solution resistance. An aluminum plating solution comprises: an aluminum halide; one or more species selected from a group consisting of alkyl imidazolium halides, alkyl pyridinium halides and urea compounds; and an ammonium salt represented by general formula (1). The concentration of the ammonium salt is 1 g/L to 45 g/L. NR4 +∙X- ... general formula (1) In the general formula, R represents a hydrogen atom or an alkyl group of not more than 15 carbons that may have a side chain, and X represents a halogen atom. The Rs may be the same or different from each other.
申请公布号 WO2015111533(A1) 申请公布日期 2015.07.30
申请号 WO2015JP51179 申请日期 2015.01.19
申请人 SUMITOMO ELECTRIC INDUSTRIES,LTD. 发明人 GOTO, KENGO;HOSOE, AKIHISA;NISHIMURA, JUNICHI;OKUNO, KAZUKI;KIMURA, KOUTAROU;SAKAIDA, HIDEAKI;MOTOMURA, JUNICHI
分类号 C25D3/66;C25D1/08;C25D7/00 主分类号 C25D3/66
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