发明名称 Power Semiconductor Module
摘要 The purpose of the present invention is to reduce the wiring inductance of a power semiconductor module. It comprises a first power semiconductor device, a second power semiconductor device, a first conductor unit which is opposed to the first power semi conductor device, a second conductor unit which is opposed to the first conductor unit across the first power semiconductor device, a third conductor unit which is opposed to the second power semiconductor device, a fourth conductor unit which is opposed to the third conductor unit across the second power semiconductor device, a first intermediate conductor unit which extends from the first conductor unit, a second intermediate conductor unit which extends from the fourth conductor unit and, positive electrode side first terminal, and a positive electrode side second terminal which project from the first intermediate conductor unit, and a negative electrode side first terminal and a negative electrode side second terminal which project from the second intermediate conductor unit. The negative electrode side first terminal is arranged in a position adjacent to the positive electrode side first terminal. The negative electrode side second terminal is arranged in a position adjacent to the positive electrode side second terminal.
申请公布号 US2015214205(A1) 申请公布日期 2015.07.30
申请号 US201314421508 申请日期 2013.07.22
申请人 Htachi Automotive Systems, Ltd. 发明人 Tokuyama Takeshi;Nakatsu Kinya;Mima Akira;Hattori Yukio;Satoh Toshiya
分类号 H01L25/18;H01L25/07;H01L23/495;H01L29/861;H01L23/04;H01L23/31;H01L29/739 主分类号 H01L25/18
代理机构 代理人
主权项 1. A power semiconductor inverter comprising: a first power semiconductor device for forming an upper arm of an inverter circuit; a second power semiconductor device for forming a lower arm of the inverter circuit; a first conductor unit which is opposed to the first power semiconductor device; a second conductor unit which is opposed to the first conductor unit across the first power semiconductor device; a third conductor unit which is opposed to the second power semiconductor device; a fourth conductor unit which is opposed to the third conductor unit across the second power semiconductor device; a first intermediate conductor unit which extends from the first conductor unit; a second intermediate conductor unit which extends from the fourth conductor unit and is formed to be opposed to the first intermediate conductor unit; a positive electrode side first terminal and a positive electrode side second terminal which project from the first intermediate conductor unit; and a negative electrode side first terminal and a negative electrode side second terminal which project from the second intermediate conductor unit, wherein the negative electrode side first terminal is nearer to the positive electrode side first terminal than to the negative electrode side second terminal, and arranged in a position adjacent to the positive electrode side first terminal, and the negative electrode side second terminal is nearer to the positive electrode side second terminal than to the negative electrode side first terminal, and is arranged in a position adjacent to the positive electrode side second terminal.
地址 Hitachinaka-shi, Ibaraki JP