THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVINT THE THIN FILM TRANSISTOR

摘要

A thin film transistor in the present invention comprises a substrate; an oxide semiconductor located on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor, and facing each other on both sides of the oxide semiconductor; a first insulation layer located on the oxide semiconductor; a gate electrode located on the first insulation layer, and overlapped with the oxide semiconductor; a second insulation layer located on the gate electrode; a first conductive layer connected to the second insulation layer, and located on the source electrode and the drain electrode respectively; and a second conductive layer located on the first conductive layer, and including an opening exposing the second insulation layer.