| 摘要 |
<p>Disclosed is a composition which enables the formation of a resist underlayer film having high etching resistance (a low dry etching rate) and excellent solvent resistance. Specifically disclosed is a composition for forming a resist underlayer film, which comprises a fullerene derivative in which one to six molecules of a malonic acid diester represented by formula (1) (wherein R's independently represent an alkyl group having 1 to 10 carbon atoms) are added per fullerene molecule, a compound having at least two epoxy groups or oxirane rings, and a solvent.</p> |
