HIGH PRESSURE SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS

摘要

The present invention relates to a high pressure semiconductor substrate processing apparatus. The high pressure semiconductor substrate processing apparatus comprises: a center chamber to maintain a high pressure; a plurality of processing chambers to maintain a high pressure state in the processing of substrates fixed on an external surface of the center chamber by being arranged on the external surface of the center chamber and inserted into the center chamber; a supply and discharge chamber configured to supply and discharge the substrate to one side of the center chamber; and a gas supply apparatus to supply gas in order to maintain the high pressure state in the center chamber and the processing chamber. According to the present invention, the high pressure semiconductor processing apparatus may perform the thermal processing of a substrate with the small quantity, may perform the thermal processes in order as necessary; may increase the efficiency of the thermal process by performing the thermal processing in the high pressure; and may use hydrogen, which has a high explosion risk, through a chamber having a double wall structure or a single wall structure.