Forming high aspect ratio isolation structures

摘要

An isolation structure, such as a trench isolation structure, may be formed by forming an aperture in a semiconductor substrate and then filling the aperture with boron. In some embodiments, the aperture filling may use atomic layer deposition. In some cases, the boron may be amorphous boron. The aperture may be a high aspect ratio aperture, such as a trench, in some embodiments.

主权项

1. A method comprising:
forming an electrically isolating aperture in a semiconductor substrate; and filling the aperture with a material consisting essentially of amorphous boron.