Semiconductor device

摘要

A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor device 10 includes an active region 12, a first insulating layer 13 covering the active region 12, a floating conductor 14 formed on the first insulating layer 13, a second insulating layer 15 formed on the first insulating layer 13 and the floating conductor 14, a bonding pad 18 formed on the second insulating layer 17 and interconnection vias 19, 20 for electrically connecting the active region 12 and the bonding pad 18.

主权项

1. A semiconductor device in which a current flows in an active region between a first main electrode and a second main electrode formed on a substrate, and a gate electrode controlling an on/off operation of the current is formed on the substrate in the active region between the first main electrode and the second main electrode on the substrate, the semiconductor device comprising:
a first insulating layer covering the active region in which the first main electrode, the second main electrode. and the gate electrode are formed; a first metal layer formed on the first insulating layer; a second insulating layer formed on the first metal layer; two bonding pads connected to the first main electrode and the second main electrode, respectively, formed on the second insulating layer; a plurality of first floating conductors electrically insulated from the first main electrode, the second electrode, and the gate electrode, formed by patterning the first metal layer, so that each of the first floating conductors is insulated from others of the first floating conductors, wherein, the two bonding pads cover the plurality of the first floating conductors that are within an area of the active region in a plan view, a first field plate connected to the first main electrode, extending toward the second main electrode, and a second field plate connected to the second main electrode, extending toward the first main electrode, are formed under the two bonding pads and over the substrate, so that the first floating conductors are formed between the first field plate and the second field plate in the plan view, and further comprising under the two bonding pads and over the first metal layer, a first main electrode wiring layer connected to the first main electrode, and a second main electrode wiring layer connected to the second main electrode, wherein, in the plan view, an interconnection via connected to the first main electrode wiring layer is formed at one end on the substrate, and another interconnection via connected to the second main electrode is formed at another end on the substrate, the first main electrode wiring layer has a configuration whose width becomes narrower towards the another end from the one end, and the second main electrode wiring layer has a configuration whose width becomes narrower towards the one end from the another end, the first main electrode wiring layer and the second main electrode wiring layer are formed alternately along a direction perpendicular to a direction from the one end toward the another end.