| 发明名称 | Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases | ||
| 摘要 | According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor layer on a substrate, introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied. | ||
| 申请公布号 | US9093274(B2) | 申请公布日期 | 2015.07.28 |
| 申请号 | US201414194952 | 申请日期 | 2014.03.03 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Okuda Shinya;Mizushima Ichiro;Watanabe Kie |
| 分类号 | H01L21/02 | 主分类号 | H01L21/02 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: introducing an inert gas and a material gas into a predetermined space; applying a voltage to generate plasma in the space after introducing the inert gas and the material gas to form a semiconductor layer on a substrate; introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, the oxidation-reduction gas reacts with the plasma and forms fine particles; and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied. | ||
| 地址 | Minato-ku, Tokyo JP | ||