发明名称 Phase change memory devices, method for encoding, and methods for storing data
摘要 Phase change memory cells including a phase change media can be encoded using a source of energy that is not integral with the memory cell. External sources of energy include thermal heads, such as those used in direct thermal printing or thermal transfer printing and sources of electromagnetic radiation, such as lasers. Such types of phase change memory devices can be associated with substrates that include thermochromic materials or are suitable for thermal transfer printing so that the memory cells can be encoded and print media applied to the substrate using the same source of thermal energy.
申请公布号 US9093141(B2) 申请公布日期 2015.07.28
申请号 US201213717294 申请日期 2012.12.17
申请人 Intermec IP Corp. 发明人 Liu Zhiyong
分类号 G11C11/00;G11C13/00;H01L45/00;G11B9/04 主分类号 G11C11/00
代理机构 Additon, Higgins & Pendleton, P.A. 代理人 Additon, Higgins & Pendleton, P.A.
主权项 1. A phase-change memory device comprising: a memory cell including a phase change media having a crystallization temperature and a melting temperature; a first electrically conductive member beneath the phase change media, and a second electrically conductive member above the phase change media; and a substrate associated with the memory cell, wherein the memory cell is free of a resistive material configured to (i) emit thermal energy in response to flow of electric current through the resistive material and (ii) increase the temperature of the phase change media by transferring at least a portion of the emitted thermal energy to the phase change media; wherein the substrate comprises a thermochromic media.
地址 Everett WA US