Metallic mask patterning process for minimizing collateral etch of an underlayer

摘要

A stack of a dielectric material layer and a metallic material layer are formed on a substrate. A first organic planarization layer, a non-metallic hard mask layer, and a photoresist layer are sequentially deposited over the metallic material layer. The photoresist layer is lithographically patterned, and the pattern in the photoresist layer is transferred through the non-metallic hard mask layer, the first organic planarization layer, and the metallic material layer to form a cavity. A second organic planarization layer is deposited within the cavity and over remaining portions of the photoresist layer. The second organic planarization layer and the photoresist layer are recessed, and the non-metallic hard mask layer is subsequently removed. Remaining portions of the first and second organic planarization layers are simultaneously removed to provide physically exposed surfaces of the patterned metallic material layer and a top surface of the dielectric material layer.

主权项

1. A method of forming a patterned structure comprising:
forming a vertical stack including, from bottom to top, a metallic material layer, a first organic planarization layer, and a non-metallic hard mask layer over a dielectric material layer on a substrate; forming a cavity through said non-metallic hard mask layer, said first organic planarization layer, and said metallic material layer, wherein a top surface of said dielectric material layer is physically exposed underneath said cavity; applying a second organic planarization layer in said cavity and over said non-metallic hard mask layer; recessing an upper portion of said second organic planarization layer; removing said non-metallic hard mask layer; and removing a lower portion of said second organic planarization layer and said first organic planarization layer, wherein said top surface of said dielectric material layer is physically exposed again.