Method and system for forming non-manhattan patterns using variable shaped beam lithography

摘要

A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.

主权项

1. A method for forming a set of patterns on a surface, the method comprising:
providing a charged particle beam source; determining a target space width roughness (SWR); and exposing two series of shots on the surface, each series having two or more charged particle beam shots each, wherein each series of shots forms a continuous non-manhattan track on the surface, wherein the tracks have a space between them, and wherein the space between the tracks comprises an actual SWR, and wherein the actual SWR is within a first pre-determined tolerance of the target SWR.