ICP source design for plasma uniformity and efficiency enhancement

摘要

An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

主权项

1. A plasma reactor, comprising:
an enclosure having a ceiling forming a dielectric window; a substrate support positioned within the enclosure below the dielectric window; an RF antenna positioned above the dielectric window to radiate RF power into the enclosure and sustain plasma over the substrate; a precursor gas injector arrangement to supply precursor gas into the enclosure; a baffle situated inside the enclosure and positioned above the substrate support but below the precursor gas injector arrangement, the baffle comprising a disk having a central opening therein so as to restrict flow of the precursor gas but expose the substrate to the plasma; and, wherein the precursor gas injector arrangement comprises a plurality of nozzles evenly distributed around the periphery of the enclosure above the baffle but below the ceiling, and wherein the plasma is maintained in area above the baffle and the baffle restrict the flow of the plasma gas so as to direct the flow towards the center of the enclosure through the central opening.