发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To realize stable performance of normally-off operation in a semiconductor device comprising a group III-V compound semiconductor while having hetero-structure.SOLUTION: A semiconductor device is laminated by a p-GaN layer 32, an SI-GaN layer 62, and an AlGaN layer 34, and also comprises a gate electrode 44 Schottky-connected to a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is larger than that of the p-GaN layer 32, and the SI-GaN layer 62 has impurity concentration of 1×10cmor less. |
申请公布号 |
JP2015135992(A) |
申请公布日期 |
2015.07.27 |
申请号 |
JP20150092719 |
申请日期 |
2015.04.30 |
申请人 |
TOYOTA MOTOR CORP;TOYOTA CENTRAL R&D LABS INC |
发明人 |
SUGIMOTO MASAHIRO;KAJI TORU;NAKANO YOSHITAKA;UESUGI TSUTOMU;UEDA HIROYUKI;SOEJIMA SHIGEMASA |
分类号 |
H01L21/338;H01L21/336;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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