SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device occupying a small area and capable of higher integration and having higher storage capacity.SOLUTION: The number of wires per unit memory cell is reduced by sharing a common bit line BL by a writing transistor TRand a reading transistor TR. Data is written by turning on the writing transistor TRso that a potential of the bit line BL is supplied to a node ND, and then turning off the writing transistor TRso that a predetermined amount of charge is held in the node ND. Data is read by using a signal line RL connected to a capacitor 264 as a reading signal line or a signal line RLX connected to one of a source and drain electrodes of the reading transistor TRas a reading signal line so that a reading potential is supplied to the reading signal line, and then detecting a potential of the bit line.