| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having favorable electrical characteristics.SOLUTION: A semiconductor device includes: an insulating layer; a semiconductor layer over the insulating layer; a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer; a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal, and the effective channel width is shorter than that for a rectangular cross section. |
