TUNNELING FIELD EFFECT TRANSISTOR

摘要

Provided is a tunneling field effect transistor. A source area, a drain area, and a channel area formed between the source area and the drain area are provided. A pocket area is provided between the source area and the drain area. The channel area comprises a first area adjacent to the source area, and a second area adjacent to the drain area. A bandgap of the first area is smaller than the bandgap of the second area, and the bandgap of the pocket area is different from the bandgap of the first and second areas.